Wiss. Publikationen:
list of publications of the positron-laboratory *)
  • R. Krause-Rehberg, A. Polity, Th. Abgarjan, W. Stadler, D.M. Hofmann, B.K. Meyer, M.Azoulay 1998 Phys. Rev. B"Study of the A-center in CdTe by Means of Positron Annihilation"
  • A. Polity, Th. Abgarjan, R. Krause-Rehberg Appl. Phys. A 60 (1995) 541-544 "Defects in electron irradiated GaP studied by positron annihilation"
  • R. Krause-Rehberg, A. Polity, Th. Abgarjan Mat. Science Forum 175-178 (1995) 427-430 "Experimental Determination of the Specific Positron Trapping Rate"
  • A. Polity, Th. Abgarjan, R. Krause-Rehberg Mat. Science Forum 175-178 (1995) 473-476 "Investigations of vacancy defects in CdTe by means of Positron Annihilation"
  • R. Krause-Rehberg, Th. Abgarjan, A. Polity, M. Neubert Mat. Sci. Forum 196-201 (1995) 1285-1290 "Hg vacancies in Hg1-xCdxTe studied by positron annihilation"
  • W. Stadler, D.M. Hofmann, B.K. Meyer, R. Krause-Rehberg, A. Polity, Th. Abgarjan, M. Salk, K.W. Benz, M. Azoulay ACTA PHYSICA POLONIA A 88 (1995) 921 "Compensation models in chlorine doped CdTe based on positron annihilation and photoluminescence spectroscopy"
  • R. Krause-Rehberg, Th. Drost, A. Polity Mat. Science Forum 143-147 (1994) pp 429-434 "Study of vacancy defects in II-VI compounds by means of positron annihilation"
  • R. Krause-Rehberg, A. Polity, Th. Drost, G. Roos, G. Pensl, D. Volm, B.K. Meyer Mat. Science Forum 143-147 (1994) pp 1099-1104 "Vacancy related metastable defects in III-V semiconductors - A study of the EL2 and DX centre by positron annihialtion, photoconductivity and infrared spectroscopy"
  • H.S. Leipner, R. Krause-Rehberg, A. Polity, Th. Drost, M. Brohl, H. Alexander Mat. Science Forum 143-147 (1994) pp1589-1594
  • R. Krause-Rehberg, H.S. Leipner, A. Kupsch, A. Polity, Th. Drost Phys. Rev. B 49 (1994) 2385-2395 "Positron study of defects in as-grown and plastically deformed GaAs:Te"
  • R. Krause-Rehberg, H.S. Leipner, M. Brohl, Th. Drost, A. Polity, U. Beyer, H. Alexander Phys. Rev. B 47 (1993) 13266-13276 "Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium"
  • H.S. Leipner, R. Krause-Rehberg, A. Kupsch, T. Drost, A. Polity phys. stat. sol. (a) 138 (1993) 489-495 "Electron microscopy and positron investigation of plastically deformed GaAs"
  • R. Krause-Rehberg, Th. Drost, A. Polity, G. Roos, G. Pensl, D. Volm, B.K. Meyer, G. Bischopink, K.W. Benz Phys. Rev. B 48 (1993) 11723 "Evidence for a vacancy related ground state of the DX centre in GaAlSb - a positron annihilation study"
  • R. Krause-Rehberg, H. Zimmermann, A. Klimakow, Th. Drost, phys. stat. sol. (a) 134 (1992) K45 "Occupation of the Cd vacancy site in CdTe by diffusing silver atoms observed by positron annihilation"
  • R. Krause, M. Neubert, Th. Drost, W. Hörstel, A. Polity, F.M. Kiessling, U. Paitz, V. Zlomanov, S. Mäkinen Materials Science Forum 105-110 (1992) 333-340 "Vacancies in II-VI and IV-VI compound semiconductors studied by positron lifetime spectroscopy"
  • R. Krause-Rehberg, U. Beyer, Th. Drost, A. Polity, H. Leipner, M. Brohl, H. Alexander Materials Science Forum 105-110 (1992) 1101-1104 "Study of deformed Si and Ge by positron lifetime measurements"

*) Thoralf´s  previous name is "Drost"

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